Analysis of AlGaAs/GaAs solar cell structures by optical reflectance spectroscopy

Analysis of AlGaAs/GaAs solar cell structures by optical reflectance spectroscopy

The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structures is presented. The calculation of the reflectan...

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Veröffentlicht in:IEEE transactions on electron devices 1990-02, Vol.37 (2), p.450-454
Hauptverfasser: Sanfacon, M.M., Tobin, S.P.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Energy
Exact sciences and technology
Gallium arsenide
Natural energy
Optical device fabrication
Optical devices
Optical films
Optical sensors
Photovoltaic cells
Reflectivity
Semiconductor device modeling
Solar energy
Solar thermal conversion
Spectroscopy
Transistors
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Zusammenfassung:The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structures is presented. The calculation of the reflectance of a system of thin films is described along with the computer program, REFIT, for the analysis of GaAs cell structures. Results are presented for structures at different stages in the solar cell fabrication process, and the method is applied to the analysis of the oxidation of high AlAs mole fraction AlGaAs layers.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.46382