Planar, compatible OEIC's based on multiquantum well structures

Planar, compatible OEIC's based on multiquantum well structures

An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1989-01, Vol.1 (1), p.16-18
Hauptverfasser: Wada, O., Furuya, A., Makiuchi, M.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
FETs
Impurities
Integrated circuit technology
Optical device fabrication
Optical devices
Optical transmitters
Optoelectronic devices
Productivity
Quantum well devices
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 18
container_issue 1
container_start_page 16
container_title IEEE photonics technology letters
container_volume 1
creator Wada, O.
Furuya, A.
Makiuchi, M.
description An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.< >
doi_str_mv 10.1109/68.87881
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28759092</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>87881</ieee_id><sourcerecordid>28536612</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1831-1103c699fb2e33c5825e41920f0401f6aafda0e06aeb36f66e9ab3ef6e95503f3</originalsourceid><addsrcrecordid>eNqNkM1LAzEQxYMoWKvg1VtO6sHWmc0mm5xEStVCoR70HLLbCazsR5vsIv73bl3x7Ok9mB_vDY-xS4Q5Iph7pec60xqP2ARNijPALD0ePAweUchTdhbjBwCmUqQT9vBaucaFO1609c51ZV4R3yxXi5vIcxdpy9uG133VlfveNV1f80-qKh670BddHyiesxPvqkgXvzpl70_Lt8XLbL15Xi0e17MCtTg0gyiUMT5PSIhC6kRSiiYBDymgV875rQMC5SgXyitFxuWC_KBSgvBiyq7H3F1o9z3FztZlLIZfXENtH22ijcmGpn-AmTRgkn-AUiiFB_B2BIvQxhjI210oaxe-LII9bG6Vtj-bD-jViJZE9IeNt29Zpno8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28536612</pqid></control><display><type>article</type><title>Planar, compatible OEIC's based on multiquantum well structures</title><source>IEEE Electronic Library (IEL)</source><creator>Wada, O. ; Furuya, A. ; Makiuchi, M.</creator><creatorcontrib>Wada, O. ; Furuya, A. ; Makiuchi, M.</creatorcontrib><description>An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.&lt; &gt;</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.87881</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping ; FETs ; Impurities ; Integrated circuit technology ; Optical device fabrication ; Optical devices ; Optical transmitters ; Optoelectronic devices ; Productivity ; Quantum well devices</subject><ispartof>IEEE photonics technology letters, 1989-01, Vol.1 (1), p.16-18</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1831-1103c699fb2e33c5825e41920f0401f6aafda0e06aeb36f66e9ab3ef6e95503f3</citedby><cites>FETCH-LOGICAL-c1831-1103c699fb2e33c5825e41920f0401f6aafda0e06aeb36f66e9ab3ef6e95503f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/87881$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/87881$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wada, O.</creatorcontrib><creatorcontrib>Furuya, A.</creatorcontrib><creatorcontrib>Makiuchi, M.</creatorcontrib><title>Planar, compatible OEIC's based on multiquantum well structures</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.&lt; &gt;</description><subject>Doping</subject><subject>FETs</subject><subject>Impurities</subject><subject>Integrated circuit technology</subject><subject>Optical device fabrication</subject><subject>Optical devices</subject><subject>Optical transmitters</subject><subject>Optoelectronic devices</subject><subject>Productivity</subject><subject>Quantum well devices</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqNkM1LAzEQxYMoWKvg1VtO6sHWmc0mm5xEStVCoR70HLLbCazsR5vsIv73bl3x7Ok9mB_vDY-xS4Q5Iph7pec60xqP2ARNijPALD0ePAweUchTdhbjBwCmUqQT9vBaucaFO1609c51ZV4R3yxXi5vIcxdpy9uG133VlfveNV1f80-qKh670BddHyiesxPvqkgXvzpl70_Lt8XLbL15Xi0e17MCtTg0gyiUMT5PSIhC6kRSiiYBDymgV875rQMC5SgXyitFxuWC_KBSgvBiyq7H3F1o9z3FztZlLIZfXENtH22ijcmGpn-AmTRgkn-AUiiFB_B2BIvQxhjI210oaxe-LII9bG6Vtj-bD-jViJZE9IeNt29Zpno8</recordid><startdate>198901</startdate><enddate>198901</enddate><creator>Wada, O.</creator><creator>Furuya, A.</creator><creator>Makiuchi, M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7U5</scope></search><sort><creationdate>198901</creationdate><title>Planar, compatible OEIC's based on multiquantum well structures</title><author>Wada, O. ; Furuya, A. ; Makiuchi, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1831-1103c699fb2e33c5825e41920f0401f6aafda0e06aeb36f66e9ab3ef6e95503f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Doping</topic><topic>FETs</topic><topic>Impurities</topic><topic>Integrated circuit technology</topic><topic>Optical device fabrication</topic><topic>Optical devices</topic><topic>Optical transmitters</topic><topic>Optoelectronic devices</topic><topic>Productivity</topic><topic>Quantum well devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Wada, O.</creatorcontrib><creatorcontrib>Furuya, A.</creatorcontrib><creatorcontrib>Makiuchi, M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wada, O.</au><au>Furuya, A.</au><au>Makiuchi, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar, compatible OEIC's based on multiquantum well structures</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1989-01</date><risdate>1989</risdate><volume>1</volume><issue>1</issue><spage>16</spage><epage>18</epage><pages>16-18</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/68.87881</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 1989-01, Vol.1 (1), p.16-18
issn 1041-1135
1941-0174
language eng
recordid cdi_proquest_miscellaneous_28759092
source IEEE Electronic Library (IEL)
subjects Doping
FETs
Impurities
Integrated circuit technology
Optical device fabrication
Optical devices
Optical transmitters
Optoelectronic devices
Productivity
Quantum well devices
title Planar, compatible OEIC's based on multiquantum well structures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T12%3A28%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Planar,%20compatible%20OEIC's%20based%20on%20multiquantum%20well%20structures&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Wada,%20O.&rft.date=1989-01&rft.volume=1&rft.issue=1&rft.spage=16&rft.epage=18&rft.pages=16-18&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.87881&rft_dat=%3Cproquest_RIE%3E28536612%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28536612&rft_id=info:pmid/&rft_ieee_id=87881&rfr_iscdi=true