Planar, compatible OEIC's based on multiquantum well structures

Planar, compatible OEIC's based on multiquantum well structures

An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially...

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Veröffentlicht in:IEEE photonics technology letters 1989-01, Vol.1 (1), p.16-18
Hauptverfasser: Wada, O., Furuya, A., Makiuchi, M.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
FETs
Impurities
Integrated circuit technology
Optical device fabrication
Optical devices
Optical transmitters
Optoelectronic devices
Productivity
Quantum well devices
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Beschreibung
Zusammenfassung:An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.87881