Tunable Contacts of Bi2 O2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-02, Vol.20 (8), p.e2306363-e2306363
Hauptverfasser: Wang, Guangcan, Liu, Fengjing, Chen, Ruichang, Wang, Mingxu, Yin, Yanxue, Zhang, Jie, Sa, Zixu, Li, Pengsheng, Wan, Junchen, Sun, Li, Lv, Zengtao, Tan, Yang, Chen, Feng, Yang, Zai-Xing
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Sprache:eng
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Zusammenfassung:Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.
ISSN:1613-6829
DOI:10.1002/smll.202306363