Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench‐bridged GaN/Ga2O3/GaN back‐to‐back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de‐ionization processes in Ga2O3. Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre‐processing as an NVS. The utilization of NVS for image pre‐processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing. Trench‐bridged GaN/Ga2O3/GaN device is fabricated. According to the manipulation of the ionization and de‐ionization processe of oxygen vacancies within the Ga2O3, the device shows fast photoresponse at low voltages and persistent photoconductivity behavior at high voltages. Accordingly, various functions of the photodetector and neuromorphic vision sensor are achieved by one device and switched via bias voltage regulation.