Spiral‐Driven Vertical Conductivity in Nanocrystalline Graphene

The structure of graphene grown in chemical vapor deposition (CVD) is sensitive to the growth condition, particularly the substrate. The conventional growth of high‐quality graphene via the Cu‐catalyzed cracking of hydrocarbon species has been extensively studied; however, the direct growth on noncatalytic substrates, for practical applications of graphene such as current Si technologies, remains unexplored. In this study, nanocrystalline graphene (nc‐G) spirals are produced on noncatalytic substrates by inductively coupled plasma CVD. The enhanced out‐of‐plane electrical conductivity is achieved by a spiral‐driven continuous current pathway from bottom to top layer. Furthermore, some neighboring nc‐G spirals exhibit a homogeneous electrical conductance, which is not common for stacked graphene structure. Klein‐edge structure developed at the edge of nc‐Gs, which can easily form covalent bonding, is thought to be responsible for the uniform conductance of nc‐G aggregates. These results have important implications for practical applications of graphene with vertical conductivity realized through spiral structure. Nanocrystalline graphene spirals are successfully produced by the direct growth on noncatalytic substrates, which exhibits excellent out‐of‐plane electrical conductivity for interconnect technology. The superior vertical conductivity is achieved by covalently connecting one atomic layer and the local density of states developed in the spiral's core.