Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a=5.43 AA), nearly lattice-matched wide-bandgap materials are ZnS (a=5.41 AA) and GaP (a=5.45 AA). Isotype n-n heterojunctio...

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Veröffentlicht in:IEEE transactions on electron devices 1990-02, Vol.37 (2), p.372-381
Hauptverfasser: Landis, G.A., Loferski, J.J., Beaulieu, R., Sekula-Moise, P.A., Vernon, S.M., Spitzer, M.B., Keavney, C.J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Carrier confinement
Chemical vapor deposition
Degradation
Energy
Energy Production And Conversion
Exact sciences and technology
Heterojunctions
Lattices
Natural energy
Photovoltaic cells
Silicon
Solar energy
Solar thermal conversion
Surface texture
Voltage
Zinc compounds
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Zusammenfassung:It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a=5.43 AA), nearly lattice-matched wide-bandgap materials are ZnS (a=5.41 AA) and GaP (a=5.45 AA). Isotype n-n heterojunctions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar
ISSN:0018-9383
1557-9646
DOI:10.1109/16.46369