Extraction of contact resistivity on Kelvin L-resistor structures
The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, eas...
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Veröffentlicht in: | IEEE transactions on electron devices 1994-06, Vol.41 (6), p.1073-1074 |
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container_title | IEEE transactions on electron devices |
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creator | Santander, J. Lozano, M. Cane, C. |
description | The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents.< > |
doi_str_mv | 10.1109/16.293325 |
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Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.293325</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Conductivity ; Contact resistance ; Doping ; Electrical resistance measurement ; Electronics ; Exact sciences and technology ; Fabrication ; Kelvin ; Monitoring ; Ohmic contacts ; Resistors ; Testing ; Testing, measurement, noise and reliability</subject><ispartof>IEEE transactions on electron devices, 1994-06, Vol.41 (6), p.1073-1074</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-3ee1ca3c0523149b3989c8ba21b2c4661c9f773121779ebb61021e44a2c110043</citedby><cites>FETCH-LOGICAL-c306t-3ee1ca3c0523149b3989c8ba21b2c4661c9f773121779ebb61021e44a2c110043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/293325$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/293325$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4143996$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Santander, J.</creatorcontrib><creatorcontrib>Lozano, M.</creatorcontrib><creatorcontrib>Cane, C.</creatorcontrib><title>Extraction of contact resistivity on Kelvin L-resistor structures</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents.< ></description><subject>Applied sciences</subject><subject>Conductivity</subject><subject>Contact resistance</subject><subject>Doping</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Kelvin</subject><subject>Monitoring</subject><subject>Ohmic contacts</subject><subject>Resistors</subject><subject>Testing</subject><subject>Testing, measurement, noise and reliability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9kM1LAzEQxYMoWKsHr572IIKHrZkkm90cS6kfWPCi55AdshDZbmqSLfa_N7Klp-HN-82DeYTcAl0AUPUEcsEU56w6IzOoqrpUUshzMqMUmlLxhl-Sqxi_s5RCsBlZrn9TMJicHwrfFeiHlFURbHQxub1LhyI777bfu6HYlNPehyKmMGIas74mF53po705zjn5el5_rl7LzcfL22q5KZFTmUpuLaDhSCvGQaiWq0Zh0xoGLUMhJaDq6poDg7pWtm0lUAZWCMMwP0YFn5OHKXcX_M9oY9JbF9H2vRmsH6NmTc0aJasMPk4gBh9jsJ3eBbc14aCB6v-SNEg9lZTZ-2OoiWj6LpgBXTwdCBBcKZmxuwlz1tqTe8z4A1L4bXM</recordid><startdate>19940601</startdate><enddate>19940601</enddate><creator>Santander, J.</creator><creator>Lozano, M.</creator><creator>Cane, C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940601</creationdate><title>Extraction of contact resistivity on Kelvin L-resistor structures</title><author>Santander, J. ; Lozano, M. ; Cane, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-3ee1ca3c0523149b3989c8ba21b2c4661c9f773121779ebb61021e44a2c110043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Conductivity</topic><topic>Contact resistance</topic><topic>Doping</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Kelvin</topic><topic>Monitoring</topic><topic>Ohmic contacts</topic><topic>Resistors</topic><topic>Testing</topic><topic>Testing, measurement, noise and reliability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Santander, J.</creatorcontrib><creatorcontrib>Lozano, M.</creatorcontrib><creatorcontrib>Cane, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Santander, J.</au><au>Lozano, M.</au><au>Cane, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extraction of contact resistivity on Kelvin L-resistor structures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-06-01</date><risdate>1994</risdate><volume>41</volume><issue>6</issue><spage>1073</spage><epage>1074</epage><pages>1073-1074</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.293325</doi><tpages>2</tpages></addata></record> |
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subjects | Applied sciences Conductivity Contact resistance Doping Electrical resistance measurement Electronics Exact sciences and technology Fabrication Kelvin Monitoring Ohmic contacts Resistors Testing Testing, measurement, noise and reliability |
title | Extraction of contact resistivity on Kelvin L-resistor structures |
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