Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology
A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during b...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2004-01, Vol.25 (1), p.10-12 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 12 |
|---|---|
| container_issue | 1 |
| container_start_page | 10 |
| container_title | IEEE electron device letters |
| container_volume | 25 |
| creator | Chen, K.N. Fan, A. Tan, C.S. Reif, R. |
| description | A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10/sup -8/ /spl Omega/-cm/sup 2/ are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes. |
| doi_str_mv | 10.1109/LED.2003.821591 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28725193</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1264098</ieee_id><sourcerecordid>2585709441</sourcerecordid><originalsourceid>FETCH-LOGICAL-c523t-8f1f34b804586276a3351f6a24e24d9e8538d8196d6c2661574520deffc854213</originalsourceid><addsrcrecordid>eNqN0c9rVDEQB_AgCq61Zw9eggd7ettMfr3kKGt_CAte7DmkeZP2LW-TNcke-t-buoLgQXoaBj4zMPMl5AOwNQCzl9urr2vOmFgbDsrCK7ICpczAlBavyYqNEgYBTL8l72rdMQZSjnJFdpucmg-NFqxzbT4FpHv09Vhwj6nRHOl9ThNONOTDAQudU8MSckoYWqUxF9oeC-Iwzd3XOSe__DYPxbfe0YbhMeUlPzy9J2-iXyqe_6ln5O766sfmdth-v_m2-bIdguKiDSZCFPLeMKmM5qP2QiiI2nOJXE4WjRJmMmD1pAPXGtQoFWcTxhiMkhzEGbk47T2U_POItbn9XAMui0-Yj9UZq7nU1rIuP_9XcguKjS-BZuQKrHgB5Byskh1--gfu8rH051Vn-w3SjNJ0dHlCoeRaC0Z3KPPelycHzD2H7nro7jl0dwq9T3w8TcyI-FdzLZk14hcqJafF</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>921348748</pqid></control><display><type>article</type><title>Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology</title><source>IEEE Electronic Library (IEL)</source><creator>Chen, K.N. ; Fan, A. ; Tan, C.S. ; Reif, R.</creator><creatorcontrib>Chen, K.N. ; Fan, A. ; Tan, C.S. ; Reif, R.</creatorcontrib><description>A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10/sup -8/ /spl Omega/-cm/sup 2/ are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2003.821591</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; ANNEALING PROCESSES ; BONDING ; BONDS ; CONNECTORS (ELECTRICAL) ; Contact ; CONTACT RESISTANCE ; Copper ; Devices ; Electrical resistance measurement ; ELECTRONIC PRODUCTS ; Error analysis ; Errors ; Fabrication ; Integrated circuit interconnections ; Kelvin ; MEASUREMENT ; Measurement errors ; Testing ; Wafer bonding</subject><ispartof>IEEE electron device letters, 2004-01, Vol.25 (1), p.10-12</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c523t-8f1f34b804586276a3351f6a24e24d9e8538d8196d6c2661574520deffc854213</citedby><cites>FETCH-LOGICAL-c523t-8f1f34b804586276a3351f6a24e24d9e8538d8196d6c2661574520deffc854213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1264098$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1264098$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, K.N.</creatorcontrib><creatorcontrib>Fan, A.</creatorcontrib><creatorcontrib>Tan, C.S.</creatorcontrib><creatorcontrib>Reif, R.</creatorcontrib><title>Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10/sup -8/ /spl Omega/-cm/sup 2/ are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.</description><subject>Annealing</subject><subject>ANNEALING PROCESSES</subject><subject>BONDING</subject><subject>BONDS</subject><subject>CONNECTORS (ELECTRICAL)</subject><subject>Contact</subject><subject>CONTACT RESISTANCE</subject><subject>Copper</subject><subject>Devices</subject><subject>Electrical resistance measurement</subject><subject>ELECTRONIC PRODUCTS</subject><subject>Error analysis</subject><subject>Errors</subject><subject>Fabrication</subject><subject>Integrated circuit interconnections</subject><subject>Kelvin</subject><subject>MEASUREMENT</subject><subject>Measurement errors</subject><subject>Testing</subject><subject>Wafer bonding</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0c9rVDEQB_AgCq61Zw9eggd7ettMfr3kKGt_CAte7DmkeZP2LW-TNcke-t-buoLgQXoaBj4zMPMl5AOwNQCzl9urr2vOmFgbDsrCK7ICpczAlBavyYqNEgYBTL8l72rdMQZSjnJFdpucmg-NFqxzbT4FpHv09Vhwj6nRHOl9ThNONOTDAQudU8MSckoYWqUxF9oeC-Iwzd3XOSe__DYPxbfe0YbhMeUlPzy9J2-iXyqe_6ln5O766sfmdth-v_m2-bIdguKiDSZCFPLeMKmM5qP2QiiI2nOJXE4WjRJmMmD1pAPXGtQoFWcTxhiMkhzEGbk47T2U_POItbn9XAMui0-Yj9UZq7nU1rIuP_9XcguKjS-BZuQKrHgB5Byskh1--gfu8rH051Vn-w3SjNJ0dHlCoeRaC0Z3KPPelycHzD2H7nro7jl0dwq9T3w8TcyI-FdzLZk14hcqJafF</recordid><startdate>200401</startdate><enddate>200401</enddate><creator>Chen, K.N.</creator><creator>Fan, A.</creator><creator>Tan, C.S.</creator><creator>Reif, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>8BQ</scope><scope>JG9</scope><scope>7TB</scope><scope>FR3</scope><scope>F28</scope><scope>H8G</scope></search><sort><creationdate>200401</creationdate><title>Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology</title><author>Chen, K.N. ; Fan, A. ; Tan, C.S. ; Reif, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c523t-8f1f34b804586276a3351f6a24e24d9e8538d8196d6c2661574520deffc854213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>ANNEALING PROCESSES</topic><topic>BONDING</topic><topic>BONDS</topic><topic>CONNECTORS (ELECTRICAL)</topic><topic>Contact</topic><topic>CONTACT RESISTANCE</topic><topic>Copper</topic><topic>Devices</topic><topic>Electrical resistance measurement</topic><topic>ELECTRONIC PRODUCTS</topic><topic>Error analysis</topic><topic>Errors</topic><topic>Fabrication</topic><topic>Integrated circuit interconnections</topic><topic>Kelvin</topic><topic>MEASUREMENT</topic><topic>Measurement errors</topic><topic>Testing</topic><topic>Wafer bonding</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, K.N.</creatorcontrib><creatorcontrib>Fan, A.</creatorcontrib><creatorcontrib>Tan, C.S.</creatorcontrib><creatorcontrib>Reif, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Copper Technical Reference Library</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, K.N.</au><au>Fan, A.</au><au>Tan, C.S.</au><au>Reif, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2004-01</date><risdate>2004</risdate><volume>25</volume><issue>1</issue><spage>10</spage><epage>12</epage><pages>10-12</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10/sup -8/ /spl Omega/-cm/sup 2/ are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2003.821591</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2004-01, Vol.25 (1), p.10-12 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28725193 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing ANNEALING PROCESSES BONDING BONDS CONNECTORS (ELECTRICAL) Contact CONTACT RESISTANCE Copper Devices Electrical resistance measurement ELECTRONIC PRODUCTS Error analysis Errors Fabrication Integrated circuit interconnections Kelvin MEASUREMENT Measurement errors Testing Wafer bonding |
| title | Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T18%3A58%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Contact%20resistance%20measurement%20of%20bonded%20copper%20interconnects%20for%20three-dimensional%20integration%20technology&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Chen,%20K.N.&rft.date=2004-01&rft.volume=25&rft.issue=1&rft.spage=10&rft.epage=12&rft.pages=10-12&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2003.821591&rft_dat=%3Cproquest_RIE%3E2585709441%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=921348748&rft_id=info:pmid/&rft_ieee_id=1264098&rfr_iscdi=true |