Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during b...

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Veröffentlicht in:IEEE electron device letters 2004-01, Vol.25 (1), p.10-12
Hauptverfasser: Chen, K.N., Fan, A., Tan, C.S., Reif, R.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
ANNEALING PROCESSES
BONDING
BONDS
CONNECTORS (ELECTRICAL)
Contact
CONTACT RESISTANCE
Copper
Devices
Electrical resistance measurement
ELECTRONIC PRODUCTS
Error analysis
Errors
Fabrication
Integrated circuit interconnections
Kelvin
MEASUREMENT
Measurement errors
Testing
Wafer bonding
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Beschreibung
Zusammenfassung:A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10/sup -8/ /spl Omega/-cm/sup 2/ are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.821591