Monolithic fabrication of 2 x 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

Monolithic fabrication of 2 x 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

In this letter, we report the fabrication of 2 x 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO(2) quantum-well intermixing technique. The switches have low insertion loss to be about 4-...

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Veröffentlicht in:IEEE photonics technology letters 2001-12, Vol.13 (12), p.1292-1294
Hauptverfasser: Qiu, B C, Liu, X F, Ke, M L, Lee, H K, Bryce, A C, Aitchison, J S, Marsh, J H, Button, C B
Format: Artikel
Sprache:eng
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Zusammenfassung:In this letter, we report the fabrication of 2 x 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO(2) quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB
ISSN:1041-1135
DOI:10.1109/68.969885