Avalanche Noise from Schottky Barrier Diodes in the Frequency Range 75 - 115 GHz (Technical Notes)

Avalanche Noise from Schottky Barrier Diodes in the Frequency Range 75 - 115 GHz (Technical Notes)

Excess noise has been generated in the 75-115 GHz band, by reverse biasing GaAs Schottky barrier diodes into avalanche breakdown. Diodes with lower epi-layer doping yield lower excess noise, but provide stable avalanche noise, and are less liable to generate excess mixer noise. A sharp reverse bias...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1978-10, Vol.26 (10), p.843-844
Hauptverfasser: Keen, N.J., Haas, R.W., Zimmerman, P.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustical engineering
Avalanche breakdown
Doping
Frequency
Gallium arsenide
Millimeter wave technology
Noise generators
Noise measurement
Schottky barriers
Schottky diodes
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Zusammenfassung:Excess noise has been generated in the 75-115 GHz band, by reverse biasing GaAs Schottky barrier diodes into avalanche breakdown. Diodes with lower epi-layer doping yield lower excess noise, but provide stable avalanche noise, and are less liable to generate excess mixer noise. A sharp reverse bias characteristic appears to be a precondition for a stable avalanche noise output.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1978.1129497