GaN/AlGaN p-channel inverted heterostructure JFET

A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage...

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Veröffentlicht in:	IEEE electron device letters 2002-08, Vol.23 (8), p.452-454
Hauptverfasser:	Shatalov, M., Simin, G., Jianping Zhang, Adivarahan, V., Koudymov, A., Pachipulusu, R., Asif Khan, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Capacitive sensors Devices FETs Gallium nitride Gallium nitrides Gates HEMTs Heterostructures JFET Leakage current MODFETs P-n junctions Strain Superlattices Threshold voltage
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Beschreibung
Zusammenfassung:	A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2002.801295