Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors

Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors

A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the help of a model for HBT thermal resistance. Measur...

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Veröffentlicht in:IEEE transactions on electron devices 1991-06, Vol.38 (6), p.1553-1554
Hauptverfasser: Adlerstein, M.G., Zaitlin, M.P.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Calibration
Electrical resistance measurement
Electronics
Exact sciences and technology
Fingers
Gallium arsenide
Heterojunction bipolar transistors
Measurement techniques
Ovens
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Thermal resistance
Transistors
Voltage
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Beschreibung
Zusammenfassung:A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the help of a model for HBT thermal resistance. Measured values agree with the predictions of the model for heat flow for single-emitter HBTs.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.81653