A laser plasma X-ray source for the analysis of wafer surfaces by grazing emission X-ray fluorescence spectrometry

A wavelength-dispersive X-ray fluorescence spectrometer incorporating a novel X-ray source with which X-rays are generated by means of light pulses from a powerful femtosecond laser is described. The instrument has been designed in order to explore whether laser-induced X-rays can replace convention...

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Veröffentlicht in:Spectrochimica acta. Part B: Atomic spectroscopy 2004-08, Vol.59 (8), p.1159-1164
Hauptverfasser: Schwenke, H., Knoth, J., Beaven, P.A., Kiehn, R., Buhrz, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:A wavelength-dispersive X-ray fluorescence spectrometer incorporating a novel X-ray source with which X-rays are generated by means of light pulses from a powerful femtosecond laser is described. The instrument has been designed in order to explore whether laser-induced X-rays can replace conventional X-ray sources in the examination of wafer surfaces for traces of contaminant elements by X-ray fluorescence spectrometry. The laser plasma source developed employs as target an ultra-thin (10–20 μm) silicon foil situated parallel to and a few mm above the wafer surface to be analyzed. The Si-K α radiation emitted from the laser plasma cloud produced on the surface of the target as a result of the interaction of the femtosecond laser pulse with the silicon foil is used for the excitation of aluminium atoms on the surface of the sample wafer.
ISSN:0584-8547
1873-3565
DOI:10.1016/j.sab.2003.11.011