0.12-μm gate III-V nitride HFET's with high contact resistances

0.12-μm gate III-V nitride HFET's with high contact resistances

HFET's with 0.12-μm gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, f T of 46.9 GHz and f max of 103 GHz were measured with the Ti/Au contacts, t...

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Veröffentlicht in:IEEE electron device letters 1997-04, Vol.18 (4), p.141-143
Hauptverfasser: Burm, J., Chu, K., Schaff, W.J., Eastman, L.F., Khan, M.A., Qisheng Chen, Yang, J.W., Shur, M.S.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Contact resistance
Electrical resistance measurement
Gallium nitride
Gold
HEMTs
III-V semiconductor materials
MODFETs
Monitoring
Ohmic contacts
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Beschreibung
Zusammenfassung:HFET's with 0.12-μm gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, f T of 46.9 GHz and f max of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 μm). In addition, the effects of high contact resistances at high frequency are discussed.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.563309