Variable < e1 > V < /e1 > (CC) design techniques forbattery-operated DRAMs

Wide-voltage-range DRAMs with extended data retention are desirable for battery-operated or portable computers and consumer devices. The techniques required to obtain wide operation, functionality, and performance of standard DRAMs from 1.8 V (two NiCd or alkaline batteries) to 3.6 V (upper end of LVTTL standard) are described. Specific techniques shown are: (1) a low-power and low-voltage reference generator for detecting < e1 > V < /e1 > (CC) level; (2) compensation of DC generators, < e1 > V < /e1 > (BB) and < e1 > V < /e1 > (PP), for obtaining high speed at reduced voltages; (3) a static word-line driver and latch-isolation sense amplifier for reducing operating current; and (4) a programmable < e1 > V < /e1 > (CC ) variable self-refresh scheme for obtaining maximum data retention time over a full operating range. A sub-50-ns access time is obtained for a 16 M DRAM (2 Mx8) by simulation