Verification of on-wafer noise parameter measurements

Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-n...

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Veröffentlicht in:	IEEE transactions on instrumentation and measurement 1995-04, Vol.44 (2), p.332-335
Hauptverfasser:	Boudiaf, A., Dubon-Chevallier, C., Pasquet, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic reflection Applied sciences Bandwidth Circuit noise Circuit properties Electric, optical and optoelectronic circuits Electrical resistance measurement Electronics Exact sciences and technology FETs Measurement standards Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise figure Noise measurement Scattering parameters Testing
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Beschreibung
Zusammenfassung:	Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth.< >
ISSN:	0018-9456 1557-9662
DOI:	10.1109/19.377845