Test structures for evaluating strong phase shift lithography

Test structures for evaluating strong phase shift lithography

Test structures are presented for the evaluation of phase shift lithography on the gate level of a CMOS technology. The structures address the measurement of phase shift printed linewidth, the evaluation of transistors as a function of phase shifter geometry, and the detection of misalignment of con...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2002-05, Vol.15 (2), p.195-200
Hauptverfasser: Ashton, R.A., Kane, B.C., Blatchford, J.W., Shuttleworth, D.M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
CMOS
CMOS technology
Contact
Costs
Electronics
Exact sciences and technology
Gates
Geometrical optics
Lithography
Microelectronic fabrication (materials and surfaces technology)
Phase detection
Phase measurement
Phase shift
Phase shifters
Printing
Resists
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Testing
Testing, measurement, noise and reliability
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Beschreibung
Zusammenfassung:Test structures are presented for the evaluation of phase shift lithography on the gate level of a CMOS technology. The structures address the measurement of phase shift printed linewidth, the evaluation of transistors as a function of phase shifter geometry, and the detection of misalignment of contact windows to the phase shift printed gate.
ISSN:0894-6507
1558-2345
DOI:10.1109/66.999592