Threshold voltage stabilization in radiation environments

Threshold voltage stabilization in radiation environments

CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is...

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Veröffentlicht in:IEEE Transactions on Nuclear Science 1998-12, Vol.45 (6), p.3175-3178
Hauptverfasser: Kerns, D.V., Barnaby, H.J., Kerns, S.E.
Format: Artikel
Sprache:eng
Schlagworte:
Charge pumps
Circuit simulation
Circuit testing
CMOS technology
Design optimization
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
Feedback
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
IONIZING RADIATIONS
MOSFETs
RADIATION DOSES
RADIATION HARDENING
Threshold voltage
Voltage control
Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.736196