Status of InP HEMT technology for microwave receiver applications
The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at whic...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1996-12, Vol.44 (12), p.2328-2333 |
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| container_issue | 12 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 44 |
| creator | Smith, P.M. |
| description | The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed. |
| doi_str_mv | 10.1109/22.554545 |
| format | Article |
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Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.554545</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Frequency ; HEMTs ; Indium phosphide ; Microwave amplifiers ; Microwave integrated circuits ; Microwave technology ; MMICs ; Noise figure ; Noise measurement ; Performance loss</subject><ispartof>IEEE transactions on microwave theory and techniques, 1996-12, Vol.44 (12), p.2328-2333</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-c54fcb656cdb289253dd471f842c93ea0b7d7e596599ef005b9668c18670a8e63</citedby><cites>FETCH-LOGICAL-c405t-c54fcb656cdb289253dd471f842c93ea0b7d7e596599ef005b9668c18670a8e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/554545$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/554545$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Smith, P.M.</creatorcontrib><title>Status of InP HEMT technology for microwave receiver applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.</description><subject>Frequency</subject><subject>HEMTs</subject><subject>Indium phosphide</subject><subject>Microwave amplifiers</subject><subject>Microwave integrated circuits</subject><subject>Microwave technology</subject><subject>MMICs</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>Performance loss</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqN0EFLwzAUB_AgCs7pwaunnAQPnUmapMlxjM0NJgrOc0nTV610TU26yb69kQ6vyjs8Hu_H4_FH6JqSCaVE3zM2EYLHOkEjKkSWaJmRUzQihKpEc0XO0UUIH3HkgqgRmr70pt8F7Cq8ap_xcv64wT3Y99Y17u2AK-fxtrbefZk9YA8W6j14bLquqa3pa9eGS3RWmSbA1bGP0etivpktk_XTw2o2XSeWE9EnVvDKFlJIWxZMaSbSsuQZrRRnVqdgSJGVGQgthdZQESIKLaWyVMX_jQKZjtHtcLfz7nMHoc-3dbDQNKYFtws500SkPPsHjCd5yvnfUKZKcZFFeDfAGEQIHqq88_XW-ENOSf4Te85YPsQe7c1gawD4dcflN-3Ze3Y</recordid><startdate>19961201</startdate><enddate>19961201</enddate><creator>Smith, P.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19961201</creationdate><title>Status of InP HEMT technology for microwave receiver applications</title><author>Smith, P.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-c54fcb656cdb289253dd471f842c93ea0b7d7e596599ef005b9668c18670a8e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Frequency</topic><topic>HEMTs</topic><topic>Indium phosphide</topic><topic>Microwave amplifiers</topic><topic>Microwave integrated circuits</topic><topic>Microwave technology</topic><topic>MMICs</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>Performance loss</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smith, P.M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Smith, P.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Status of InP HEMT technology for microwave receiver applications</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1996-12-01</date><risdate>1996</risdate><volume>44</volume><issue>12</issue><spage>2328</spage><epage>2333</epage><pages>2328-2333</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.</abstract><pub>IEEE</pub><doi>10.1109/22.554545</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1996-12, Vol.44 (12), p.2328-2333 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28674344 |
| source | IEEE Electronic Library (IEL) |
| subjects | Frequency HEMTs Indium phosphide Microwave amplifiers Microwave integrated circuits Microwave technology MMICs Noise figure Noise measurement Performance loss |
| title | Status of InP HEMT technology for microwave receiver applications |
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