Status of InP HEMT technology for microwave receiver applications

Status of InP HEMT technology for microwave receiver applications

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at whic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 1996-12, Vol.44 (12), p.2328-2333
1. Verfasser: Smith, P.M.
Format: Artikel
Sprache:eng
Schlagworte:
Frequency
HEMTs
Indium phosphide
Microwave amplifiers
Microwave integrated circuits
Microwave technology
MMICs
Noise figure
Noise measurement
Performance loss
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.554545