Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)

Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)

The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.

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Veröffentlicht in:IEEE transactions on nuclear science 2000-06, Vol.47 (3), p.613-619
Hauptverfasser: Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
CMOS technology
Depletion
Devices
Dielectric substrates
Dynamics
Electric potential
Irradiation
Isolation technology
Low voltage
Metal oxide semiconductors
MOS devices
MOSFETs
Silicon
Threshold voltage
Transistors
Voltage
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Beschreibung
Zusammenfassung:The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.856488