Study of polycrystalline CuInSe2 thin film formation

CuInSe2 polycrystalline films were grown on glass substrates by preparing stacked elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400 DGC for different times (from 15 to 240 min). Additional growth of the various phases was followed at different temperatures until a single phase CuInSe2 film was formed. X-ray diffraction (XRD) was used in identifying the different phases formed. It was concluded that a single phase of CuInSe2 film is obtained at a reaction temperature of 300 DGC for a heating time # > 1 h.