A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)

A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensionally. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with...

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Veröffentlicht in:	IEEE transactions on electron devices 1993-12, Vol.40 (12), p.2352-2358
Hauptverfasser:	Vobecky, J., Bleichner, H., Rosling, M., Nordlander, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Absorption Applied sciences Cathodes CHARGE CARRIERS Circuits DATA DYNAMICS Electronics ENGINEERING Equations Exact sciences and technology EXPERIMENTAL DATA INFORMATION Length measurement MECHANICS NUMERICAL DATA OPERATION Other multijunction devices. Power transistors. Thyristors Pulp manufacturing Radiative recombination SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices THYRISTORS Virtual manufacturing
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Beschreibung
Zusammenfassung:	A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensionally. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with charge removal during the GTO turn-off cycle with respect to external circuit conditions are discussed. The behavior of resistively and inductively loaded GTOs is explained on the basis of experimental results. Modeled results published by others are used for comparison.< >
ISSN:	0018-9383 1557-9646 1557-9646
DOI:	10.1109/16.249486