Spatial power combining oscillators based on an extended resonance technique

Spatial power combining oscillators based on an extended resonance technique

Several spatial power combining oscillators employing an extended resonance technique have been designed and fabricated for the first time on single layer microstrip structures. Power combining efficiency, circuit tolerance to individual device variations and the effect of device failures on circuit...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1994-12, Vol.42 (12), p.2222-2228
Hauptverfasser: Mortazawi, A., de Leach, B.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Circuits
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fabry-Perot
Frequency synchronization
Injection-locked oscillators
MESFETs
Microstrip
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave devices
Microwave theory and techniques
Phased arrays
Resonance
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Zusammenfassung:Several spatial power combining oscillators employing an extended resonance technique have been designed and fabricated for the first time on single layer microstrip structures. Power combining efficiency, circuit tolerance to individual device variations and the effect of device failures on circuit performance were studied. Results obtained indicate exceptional circuit tolerance to individual device parameter variations as well as to device failures. The combiners described herein were designed and operated at 8 GHz with effective radiated powers of 0.22 W, 0.64 W and 4.3 W for a two, four and a nine device combiner, respectively.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.339746