Electrodeposited tungsten oxide films: annealing effects on structure and electrochromic performance

A potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO 3) films specifically for transmissive electrochromic devices (ECDs) such as “smart windows”. The structure–property correlation for the as-deposited thin films of WO 3 and th...

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Veröffentlicht in:Thin solid films 2004-12, Vol.468 (1), p.32-42
Hauptverfasser: Deepa, M., Kar, M., Agnihotry, S.A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO 3) films specifically for transmissive electrochromic devices (ECDs) such as “smart windows”. The structure–property correlation for the as-deposited thin films of WO 3 and the films annealed at different temperatures (60, 100, 250 and 500 °C) is described. While the as-deposited film comprises of a small volume fraction of nanocrystals, the films annealed at 60 and 100 °C are X-ray amorphous, the 250 °C film is triclinic and the 500 °C film is characterized by mixed triclinic and hexagonal crystalline phases. Scanning electron micrographs (SEMs) clearly reveal the presence of nanograins/crystallite aggregates in the heat-treated films. Coloration renders the 250 °C film amorphous and reduces the crystallite size in the as-deposited and 500 °C films. Thermal analysis provides information pertaining to the critical temperatures at which dehydration, peroxo group decomposition and crystallization occur. Fourier transform infrared (FTIR) spectroscopic data show that while the as-deposited WO 3 film is composed of a peroxopolytungstate ion network with water molecules acting as bridging groups, the crystalline film annealed at 500 °C shows absorption bands characteristic of the W–O–W network (polytungstate ions linked through oxygens). Coloration efficiency (CE; η) and transmission modulation ( ΔT) are slightly higher for the amorphous 60 °C film when compared with the nanocrystalline as-deposited film in the 450< λ
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.04.056