Scalable Electrodeposition of Liquid Metal from an Acetonitrile‐Based Electrolyte for Highly Integrated Stretchable Electronics

The advancement of highly integrated stretchable electronics requires the development of scalable sub‐micrometer conductor patterning. Eutectic gallium indium (EGaIn) is an attractive conductor for stretchable electronics, as its liquid metallic character grants it high electrical conductivity upon deformation. However, its high surface tension makes its patterning with sub‐micrometer resolution challenging. In this work, this limitation is overcome by way of the electrodeposition of EGaIn. A non‐aqueous acetonitrile‐based electrolyte that exhibits high electrochemical stability and chemical orthogonality is used. The electrodeposited material leads to low‐resistance lines that remain stable upon (repeated) stretching to a 100% strain. Because electrodeposition benefits from the resolution of mature nanofabrication methods used to pattern the base metal, the proposed “bottom‐up” approach achieves a record‐high density integration of EGaIn regular lines of 300 nm half‐pitch on an elastomer substrate by plating on a gold seed layer prepatterned by nanoimprinting. Moreover, vertical integration is enabled by filling high‐aspect‐ratio vias. This capability is conceptualized by the fabrication of an omnidirectionally stretchable 3D electronic circuit, and demonstrates a soft‐electronic analog of the stablished damascene process used to fabricate microchip interconnects. Overall, this work proposes a simple route to address the challenge of metallization in highly integrated (3D) stretchable electronics. Eutectic gallium indium (EGaIn) is an attractive conductor for stretchable electronics but its high surface tension makes sub‐micrometer patterning challenging. This limitation is overcome by electrodeposition, a “bottom‐up” approach that benefits from the resolution of mature nanofabrication methods. A record‐high integration of EGaIn lines of 300 nm half‐pitch is achieved. Moreover, vertical integration is enabled, leading to omnidirectionally stretchable 3D electronics.