Spin-resonant change of unlocking stress for dislocations in silicon

In this work we have observed a significant increase of unlocking stress for dislocations in Cz‐Si caused by the microwave magnetic field in a condition of spin resonance corresponding to g‐factor value of about 2.0. The result can be interpreted in terms of spin‐dependent reactions of oxygen accumu...

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Veröffentlicht in:	Physica status solidi. C 2005-04, Vol.2 (6), p.1869-1872
Hauptverfasser:	Badylevich, M. V., Kveder, V. V., Orlov, V. I., Ossipyan, Yu. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.Hh 61.72.Ji 76.30.Lh
Online-Zugang:	Volltext
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Zusammenfassung:	In this work we have observed a significant increase of unlocking stress for dislocations in Cz‐Si caused by the microwave magnetic field in a condition of spin resonance corresponding to g‐factor value of about 2.0. The result can be interpreted in terms of spin‐dependent reactions of oxygen accumulated at dislocations. However, the specific atomistic model for the effect is still missing. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200460534