Electrical evaluation of laser annealed junctions by Hall measurements

Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature. Samples annealed with lower laser energy fluences displayed the unexpected n-type characteristics over a wider temperature range compared to those annealed at higher energy fluences. These results can be explained by the increased contribution of the n-type substrate to the Hall readings, made possible by a more leaky junction, when the implant damage is inadequately removed. Thus, Hall measurements can be proposed as a quick evaluation tool of the integrity of laser annealed junctions without the need of device fabrication or high-resolution transmission electron microscopy.