The enhancement of photoluminescence from porous silicon with Si–Ti bond

The enhancement of photoluminescence from porous silicon with Si–Ti bond

Porous silicon (PS) was passivated with titanium by direct current sputtering. The enhancement and blueshift of photoluminescence (PL) peak were observed under the irradiation of ultraviolet light. X-ray photoelectron spectroscopy (XPS) results show that the formation of Si-Ti bond is responsible fo...

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Veröffentlicht in:Materials letters 2005-10, Vol.59 (24-25), p.3135-3137
Hauptverfasser: Sun, J., Han, X., Du, X.W., Lu, Y.W.
Format: Artikel
Sprache:eng
Schlagworte:
Passivation
Photoluminescence
Porous silicon
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Zusammenfassung:Porous silicon (PS) was passivated with titanium by direct current sputtering. The enhancement and blueshift of photoluminescence (PL) peak were observed under the irradiation of ultraviolet light. X-ray photoelectron spectroscopy (XPS) results show that the formation of Si-Ti bond is responsible for the improvement of PL properties.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2005.05.035