Organic field-effect transistors with ultrathin modified gate insulator
In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar ® films covered by ultrathin (∼3.5 nm) SiO 2 layers, which were modified via application of n-octadecytrichlorosila...
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Veröffentlicht in: | Synthetic metals 2005-06, Vol.151 (2), p.175-179 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar
® films covered by ultrathin (∼3.5
nm) SiO
2 layers, which were modified via application of
n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO
2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold ( |
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ISSN: | 0379-6779 1879-3290 |
DOI: | 10.1016/j.synthmet.2005.04.006 |