Organic field-effect transistors with ultrathin modified gate insulator

In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar ® films covered by ultrathin (∼3.5 nm) SiO 2 layers, which were modified via application of n-octadecytrichlorosila...

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Veröffentlicht in:Synthetic metals 2005-06, Vol.151 (2), p.175-179
Hauptverfasser: Majewski, L.A., Grell, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar ® films covered by ultrathin (∼3.5 nm) SiO 2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO 2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2005.04.006