Simple equations for the electrostatic potential in buried-channel MOS devices
Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to nu...
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| Veröffentlicht in: | IEEE transactions on electron devices 1992-07, Vol.39 (7), p.1770-1772 |
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| Hauptverfasser: | , |
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| container_end_page | 1772 |
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| container_issue | 7 |
| container_start_page | 1770 |
| container_title | IEEE transactions on electron devices |
| container_volume | 39 |
| creator | Yin, Y. Cooper, J.A. |
| description | Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found.< > |
| doi_str_mv | 10.1109/16.141247 |
| format | Article |
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If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found.< ></description><subject>Applied sciences</subject><subject>Avalanche breakdown</subject><subject>Compound structure devices</subject><subject>Electric breakdown</subject><subject>Electron devices</subject><subject>Electronics</subject><subject>Electrostatics</subject><subject>Equations</subject><subject>Erbium</subject><subject>Exact sciences and technology</subject><subject>MOS devices</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.141247</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1770-1772 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28624884 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Avalanche breakdown Compound structure devices Electric breakdown Electron devices Electronics Electrostatics Equations Erbium Exact sciences and technology MOS devices Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid state circuits Voltage |
| title | Simple equations for the electrostatic potential in buried-channel MOS devices |
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