Simple equations for the electrostatic potential in buried-channel MOS devices

Simple equations for the electrostatic potential in buried-channel MOS devices

Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to nu...

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Veröffentlicht in:IEEE transactions on electron devices 1992-07, Vol.39 (7), p.1770-1772
Hauptverfasser: Yin, Y., Cooper, J.A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Avalanche breakdown
Compound structure devices
Electric breakdown
Electron devices
Electronics
Electrostatics
Equations
Erbium
Exact sciences and technology
MOS devices
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid state circuits
Voltage
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Beschreibung
Zusammenfassung:Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.141247