Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature

Gallium doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by r.f. magnetron sputtering at low substrates temperature. Structural, electrical and optical properties of the ZnO:Ga films were investigated in terms of the preparation conditions. The obtained films were polycrystalline wi...

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Veröffentlicht in:	Applied surface science 2005-01, Vol.239 (2), p.222-226
Hauptverfasser:	Yu, Xuhu, Ma, Jin, Ji, Feng, Wang, Yuheng, Zhang, Xijian, Cheng, Chuanfu, Ma, Honglei
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrical and optical properties Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Magnetron sputtering Materials science Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology ZnO:Ga films
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Zusammenfassung:	Gallium doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by r.f. magnetron sputtering at low substrates temperature. Structural, electrical and optical properties of the ZnO:Ga films were investigated in terms of the preparation conditions. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. The transmittance of the ZnO:Ga films in the visible range was over 90%. The lowest resistivity and sheet resistance for the ZnO:Ga films were about 3.9 × 10 −4 Ω cm and 4 Ω/□, respectively.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2004.05.266