Radiation-stimulated modification of C60 films on Si-oxide surfaces
The electronic structure of C60/SiOx/Si(100) interface was studied by photoemission (valence-bands, C 1s, and Si 2p core levels) and near-edge X-ray absorption fine structure (C 1s threshold) spectroscopies. It was concluded that the SiOx/Si surface is non-reactive with respect to the interaction wi...
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Veröffentlicht in: | Journal of electron spectroscopy and related phenomena 2005-09, Vol.148 (3), p.142-150 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The electronic structure of C60/SiOx/Si(100) interface was studied by photoemission (valence-bands, C 1s, and Si 2p core levels) and near-edge X-ray absorption fine structure (C 1s threshold) spectroscopies. It was concluded that the SiOx/Si surface is non-reactive with respect to the interaction with C60. The exposure of the C60/SiOx/Si system under non-monochromatic synchrotron radiation causes modification of the electronic structure of this system. It is explained by polymerization of the C60 molecules and arising a strong ionic-like interaction of the polymerized C60 with the SiOx surface. Annealing of this system up to temperatures of 550-625DDGC leads to complete desorption of the C60 molecules from the non-irradiated sample areas while the modified by radiation fullerenes remain attached to the substrate. |
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ISSN: | 0368-2048 |
DOI: | 10.1016/j.elspec.2005.05.002 |