Influence of the deformation on the luminescence properties of Si light-emitting diodes

Electroluminescence (EL) in a wavelength range of 1.0–1.65 µm at currents up to 1500 mA has been studied in light‐emitting diodes (LEDs) deformed by four‐point bending at 650 °C. LEDs were fabricated by the implantation of B and P ions into n‐Cz‐Si and n‐FZ‐Si substrates with subsequent anneals in a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2005-04, Vol.2 (6), p.1842-1846
Hauptverfasser:	Sobolev, N.A., Emel'yanov, A.M., Shek, E.I., Feklisova, O.V., Yakimov, E.B., Kotereva, T.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.55.Cn 78.60.Fi 85.60.Jb
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!