Influence of the deformation on the luminescence properties of Si light-emitting diodes

Electroluminescence (EL) in a wavelength range of 1.0–1.65 µm at currents up to 1500 mA has been studied in light‐emitting diodes (LEDs) deformed by four‐point bending at 650 °C. LEDs were fabricated by the implantation of B and P ions into n‐Cz‐Si and n‐FZ‐Si substrates with subsequent anneals in argon at 700 and 1100 °C. An intensity of dislocation‐related EL is higher in FZ‐Si samples as compared with Cz‐Si ones. Extended defects, induced into a sample before the deformation, increase an intensity of dislocation‐related EL. An analysis showed that the transformation of EL spectra in dependence on the current is precisely described by eight gaussian lines. Energies of line maxima are current independent and equal to 0.804, 0.816, 0.873, 0.900, 0.943, 0.997, 0.984 and 1.016 eV. The dependencies of an EL line intensity and a full width at a half maximum of the lines on a current have been determined. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)