Strongly Localized Moiré Exciton in Twisted Homobilayers

Artificially molding exciton flux is the cornerstone for developing promising excitonic devices. In the emerging hetero/homobilayers, the spatial separated charges prolong exciton lifetimes and create out‐plane dipoles, facilitating electrically control exciton flux on a large scale, and the nanoscale periodic moiré potentials arising from twist‐angle or/and lattice mismatch can substantially alter exciton dynamics, which are mainly proved in the heterostructures. However, the spatially indirect excitons dynamics in homobilayers without lattice mismatch remain elusive. Here the nonequilibrium dynamics of indirect exciton in homobilayers are systematically investigated. The homobilayers with slightly twist‐angle can induce a deep moiré potential (>50 meV) in the energy landscape of indirect excitons, resulting in a strongly localized moiré excitons insulating the transport dynamics from phonons and disorder. These findings provide insights into the exciton dynamics and many‐body physics in moiré superlattices modulated energy landscape, with implications for designing excitonic devices operating at room temperature. The nonequilibrium dynamics of indirect exciton in homobilayers are systematically investigated. The homobilayers with slightly twist‐angle can induce a deep moiré potential (>50 meV) in the energy landscape of indirect excitons, resulting in a strongly localized moiré excitons insulating the transport dynamics from phonons and disorder.