Preparation and characterization of indium tin oxide thin films for their application as gas sensors

The structural and electrical properties of indium tin oxide (In 2O 3/SnO 2) thin films grown using direct evaporation technique on various substrates at different temperatures were studied. The effect of annealing, of films with different weight percent concentration of SnO 2 in In 2O 3 and of diff...

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Veröffentlicht in:	Thin solid films 2005-09, Vol.487 (1), p.277-282
Hauptverfasser:	Vaishnav, V.S., Patel, P.D., Patel, N.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Gas sensor General equipment and techniques Indium tin oxide (ITO) Instruments, apparatus, components and techniques common to several branches of physics and astronomy Oxide semiconductor Physics Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	The structural and electrical properties of indium tin oxide (In 2O 3/SnO 2) thin films grown using direct evaporation technique on various substrates at different temperatures were studied. The effect of annealing, of films with different weight percent concentration of SnO 2 in In 2O 3 and of different thickness on the structural and electrical properties were studied and optimized for use as gas sensor. The stability of the films against time and temperature variations was studied. The effect of the catalytic layers on the sensor microstructure and its performance towards the gas sensing application was observed.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2005.01.079