Preparation of polydiacetylene single crystals based on physical vapor growth technique

We have succeeded in obtaining 10-mm-size polydiacetylene (PDA) single crystals using the physical vapor growth technique followed by the irradiation of ultraviolet (UV) rays, for the first time. The variety of growth conditions, such as growth temperature, growth time, carrier gases, and flow rate...

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Veröffentlicht in:Synthetic metals 2005-05, Vol.150 (3), p.223-226
Hauptverfasser: Jo, Sadaharu, Yoshikawa, Hitoshi, Fujii, Akane, Takenaga, Mitsuru
Format: Artikel
Sprache:eng
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Zusammenfassung:We have succeeded in obtaining 10-mm-size polydiacetylene (PDA) single crystals using the physical vapor growth technique followed by the irradiation of ultraviolet (UV) rays, for the first time. The variety of growth conditions, such as growth temperature, growth time, carrier gases, and flow rate of gases are examined. Especially, the growth temperature and growth time have clear effects on the quality of crystals. Morphologies and sizes with relation to the various growth conditions are also observed. They show only one type of plateletlike shape with a pair of large parallelopiped planes, regardless of variety of growth conditions. The crystal thickness was estimated as about 500 nm by the observation of atomic force microscopy. The solubility of diacetylene (DA) and PDA to some organic solvents, and the X-ray diffraction data indicate that the obtained crystals are single crystals.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2005.01.028