Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures

Electrical and polarization hysteresis measurements on Pt-BaTiO3-ZnO-Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offsets of hysteresis loops along the polarization axis with in...

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Veröffentlicht in:	Thin solid films 2005-08, Vol.486 (1-2), p.153-157
Hauptverfasser:	ASHKENOV, N, SCHUBERT, M, TWERDOWSKI, E, WENCKSTEM, H. V, MBENKUM, B. N, HOCHMUTH, H, LORENZ, M, GRILL, W, GMNDMANN, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Domain structure hysteresis Exact sciences and technology Ferroelectricity and antiferroelectricity Niobates, titanates, tantalates, pzt ceramics, etc Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Electrical and polarization hysteresis measurements on Pt-BaTiO3-ZnO-Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offsets of hysteresis loops along the polarization axis with increasing sweeping voltage, time-dependent charging, and rectifying behavior are observed. A simple electrical circuitry can be used to model the observed hysteresis behavior, where the interface between the wurtzite-structure ZnO and the pervoskite-structure BaTiO3 is seen as the origin of a space charge accumulation region. Coupling between spontaneous wurtzite and switchable ferroelectric polarization is discussed.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2004.11.226