Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE

Summary form only given. The authors report on the generation of short optical pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that optical pulses as short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE).< >