A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3-mu mapplications
A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 mum is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460 deg C. The large size detector (20...
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| Veröffentlicht in: | IEEE electron device letters 1989-07, Vol.10 (7), p.336-338 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 mum is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460 deg C. The large size detector (200x200 mum(2)) shows bias-dependent DC gain, fast response speed (FWHM < 50 ps), and reasonably low dark current |
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| ISSN: | 0741-3106 |
| DOI: | 10.1109/55.29671 |