Photon detector composed of metal and semiconductor nanoparticles

Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in curre...

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Veröffentlicht in:	Thin solid films 2005-08, Vol.485 (1), p.194-197
Hauptverfasser:	Takahashi, Atsuo, Minoura, Norihiko, Karube, Isao
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Nanostructures Optoelectronic devices Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Tunneling
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Beschreibung
Zusammenfassung:	Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in current corresponding to light intensity under light irradiation. Ultraweak photon emission of about 600 counts per second in the ultraviolet region could be detected at room temperature by this photon counter.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2005.03.034