Negative thermal expansion in the layered semiconductor TlGaSe2

Negative thermal expansion in the layered semiconductor TlGaSe2

The nature of negative thermal expansion in the layer plane of the layered semiconductor TlGaSe2 has been investigated. It is shown that, in contrast to other crystals with a layered structure in which negative linear expansion is observed, the nature of the negative thermal expansion in TlGaSe2 cry...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica Status Solidi (b) 2005-04, Vol.242 (5), p.983-989
Hauptverfasser: Abdullayev, N. A., Mammadov, T. G., Suleymanov, R. A.
Format: Artikel
Sprache:eng
Schlagworte:
64.70.Kb
65.40.De
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The nature of negative thermal expansion in the layer plane of the layered semiconductor TlGaSe2 has been investigated. It is shown that, in contrast to other crystals with a layered structure in which negative linear expansion is observed, the nature of the negative thermal expansion in TlGaSe2 crystals is due to the large Poisson contraction. The possible explanation of such an effect is discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200402126