Analysis of CdTe solar cells in relation to materials issues
By now, extensive experimental research is available on thin film solar cells based on CdTe and on CIGS, and their electrical and optical behaviour is characterised by a multitude of diverse characterisation techniques. At the same time, numerical simulation programmes have matured and are available...
Gespeichert in:
Veröffentlicht in: | Thin solid films 2005-06, Vol.480 (Complete), p.392-398 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | By now, extensive experimental research is available on thin film solar cells based on CdTe and on CIGS, and their electrical and optical behaviour is characterised by a multitude of diverse characterisation techniques. At the same time, numerical simulation programmes have matured and are available to the research community to assist in interpreting these measurements consistently. Once multiple measurements are (more or less) quantitatively described, the numerical simulation can be used to explore the effect of a variation of materials parameter (e.g. the presence or absence of a property, or variation in a range of values) to the final solar cell characteristics. Examples of such analysis for CdTe solar cells are shown.
In CdTe cells, much research has been devoted to the activation treatment of the absorber, and to the technology of the back contact. Analysis of ample measurements has evidenced the crucial role of the profile of the (effective) doping density through the device. It will be illustrated how this relative simple (but hardly mastered) materials property has a far reaching influence to the cell characteristics such as roll-over and cross-over of
I–
V curves, also in dependence on illumination and voltage, conventional and apparent quantum efficiency, and finally fill factor and efficiency. |
---|---|
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2004.11.011 |