High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds
We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2′,7,7′-tetra-( m-tolyl-phenylamino)-9,9′-spirobifluorene (Spiro-TPD) and 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-...
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| Veröffentlicht in: | Synthetic metals 2005-02, Vol.148 (3), p.267-270 |
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| container_title | Synthetic metals |
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| creator | Saragi, Tobat P.I. Fuhrmann-Lieker, Thomas Salbeck, Josef |
| description | We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2′,7,7′-tetra-(
m-tolyl-phenylamino)-9,9′-spirobifluorene (Spiro-TPD) and 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7
×
10
−5
cm
2/Vs. We obtained ON/OFF ratios up to 3.6
×
10
6 with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months. |
| doi_str_mv | 10.1016/j.synthmet.2004.10.007 |
| format | Article |
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m-tolyl-phenylamino)-9,9′-spirobifluorene (Spiro-TPD) and 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7
×
10
−5
cm
2/Vs. We obtained ON/OFF ratios up to 3.6
×
10
6 with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months.</description><identifier>ISSN: 0379-6779</identifier><identifier>EISSN: 1879-3290</identifier><identifier>DOI: 10.1016/j.synthmet.2004.10.007</identifier><identifier>CODEN: SYMEDZ</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; ON/OFF ratio ; Organic field-effect transistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spiro-linked compounds ; Stability ; Transistors</subject><ispartof>Synthetic metals, 2005-02, Vol.148 (3), p.267-270</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-8b84a1be17f841dc214b40ada257c2576b8993ae6417573d77041ddc731a620e3</citedby><cites>FETCH-LOGICAL-c439t-8b84a1be17f841dc214b40ada257c2576b8993ae6417573d77041ddc731a620e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.synthmet.2004.10.007$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27928,27929,45999</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16585771$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Saragi, Tobat P.I.</creatorcontrib><creatorcontrib>Fuhrmann-Lieker, Thomas</creatorcontrib><creatorcontrib>Salbeck, Josef</creatorcontrib><title>High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds</title><title>Synthetic metals</title><description>We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2′,7,7′-tetra-(
m-tolyl-phenylamino)-9,9′-spirobifluorene (Spiro-TPD) and 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7
×
10
−5
cm
2/Vs. We obtained ON/OFF ratios up to 3.6
×
10
6 with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>ON/OFF ratio</subject><subject>Organic field-effect transistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spiro-linked compounds</subject><subject>Stability</subject><subject>Transistors</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkMGO0zAQQC0EEmXhF5AvcEvXTpw4uYFWlEVa0QucrYk92bokdvC4SP37ddVFHDmMPB69mdE8xt5LsZVCdrfHLZ1DPiyYt7UQqhS3QugXbCN7PVRNPYiXbCOakndaD6_ZG6KjEEIOdbthy71_PPD999v9bscTZB85BMcpw-hnn888ThyWmNZDPBGP6RGCt3zyOLsKpwlt5jlBIE85JuIjEDoeA6fVp1jNPvwqfxuXNZ6Co7fs1QQz4bvn94b93H35cXdfPey_frv7_FBZ1Qy56sdegRxR6qlX0tlaqlEJcFC32pboxn4YGsBOSd3qxmktCuasbiR0tcDmhn28zl1T_H1CymbxZHGeIWC5w9R9qzo5qAJ2V9CmSJRwMmvyC6SzkcJc7Jqj-WvXXOxe6sVuafzwvAHIwjwVB9bTv-6u7VutZeE-XTks5_7xmAxZj8Gi86nIMy76_616AvwVlQg</recordid><startdate>20050210</startdate><enddate>20050210</enddate><creator>Saragi, Tobat P.I.</creator><creator>Fuhrmann-Lieker, Thomas</creator><creator>Salbeck, Josef</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050210</creationdate><title>High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds</title><author>Saragi, Tobat P.I. ; Fuhrmann-Lieker, Thomas ; Salbeck, Josef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-8b84a1be17f841dc214b40ada257c2576b8993ae6417573d77041ddc731a620e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>ON/OFF ratio</topic><topic>Organic field-effect transistors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spiro-linked compounds</topic><topic>Stability</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saragi, Tobat P.I.</creatorcontrib><creatorcontrib>Fuhrmann-Lieker, Thomas</creatorcontrib><creatorcontrib>Salbeck, Josef</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saragi, Tobat P.I.</au><au>Fuhrmann-Lieker, Thomas</au><au>Salbeck, Josef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds</atitle><jtitle>Synthetic metals</jtitle><date>2005-02-10</date><risdate>2005</risdate><volume>148</volume><issue>3</issue><spage>267</spage><epage>270</epage><pages>267-270</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><coden>SYMEDZ</coden><abstract>We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2′,7,7′-tetra-(
m-tolyl-phenylamino)-9,9′-spirobifluorene (Spiro-TPD) and 2,2′,7,7′-tetrakis-(diphenylamino)-9,9′-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7
×
10
−5
cm
2/Vs. We obtained ON/OFF ratios up to 3.6
×
10
6 with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/j.synthmet.2004.10.007</doi><tpages>4</tpages></addata></record> |
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| ispartof | Synthetic metals, 2005-02, Vol.148 (3), p.267-270 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Applied sciences Electronics Exact sciences and technology ON/OFF ratio Organic field-effect transistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spiro-linked compounds Stability Transistors |
| title | High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds |
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