Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics

This paper presents a simulation analysis of distributed Bragg reflectors (DBRs) and their affect on the characteristics of vertical-cavity surface-emitting lasers (VCSELs). The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes...

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Veröffentlicht in:IEEE journal of quantum electronics 1998-04, Vol.34 (4), p.707-715
Hauptverfasser: Winston, D.W., Hayes, R.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a simulation analysis of distributed Bragg reflectors (DBRs) and their affect on the characteristics of vertical-cavity surface-emitting lasers (VCSELs). The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes present in VCSELs. This simulator is used to examine the electrical characteristics of some simple DBR designs. Due to the different transport characteristics of electrons and holes, these results will show that n-type DBR designs must be different than p-type designs in order to achieve the best operating characteristics for the overall laser. This analysis will demonstrate the improvement in the characteristics by comparing the simulation results of a standard VCSEL with the results of a VCSEL using improved DBR designs.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.663456