Pulse response of avalanche photodiodes

Pulse response of avalanche photodiodes

A study has been made of the time response of heterostructure avalanche photodiodes for InGaAs and InP/InGaAs material systems. A transfer/scattering matrix method, where the matrix parameters are related to the ionization coefficients, has been used. A time domain study has been carried out to find...

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Veröffentlicht in:Journal of lightwave technology 1992-02, Vol.10 (2), p.169-181
Hauptverfasser: Roy, B.C., Chakrabarti, N.B.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Applied sciences
Avalanche photodiodes
Bandwidth
Charge carrier processes
Dark current
Electronics
Exact sciences and technology
Frequency response
Indium gallium arsenide
Indium phosphide
Ionization
Optoelectronic devices
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:A study has been made of the time response of heterostructure avalanche photodiodes for InGaAs and InP/InGaAs material systems. A transfer/scattering matrix method, where the matrix parameters are related to the ionization coefficients, has been used. A time domain study has been carried out to find the time variation of electron and hole number densities and currents.< >
ISSN:0733-8724
1558-2213
DOI:10.1109/50.120572